Publications Details

Transient radiation effects in D.O.I. optical materials: KD{sup *}P

Simmons-Potter, K.

Department of Energy and Defense Programs systems are becoming increasingly reliant on the use of optical technologies that must perform under a range of ionizing radiation environments. In particular, the radiation response of materials under consideration for applications in direct optical initiation (D.O.I.) schemes must be well characterized. In this report, transient radiation effects observed in a KD*P crystal are characterized. Under gamma exposure with 2 MeV photons in a 20--30 nsec pulse, the authors observe induced absorption at 1.06 {micro}m that causes a peak decrease in overall sample transmittance of only 10%. This induced loss is seen to recover fully within the first 30 {micro}sec.