Publications Details
{sup 15}N hydrogen profiling of IC metallizations
The 6.4 MeV p({sup l5}N,{alpha}{gamma}){sup 12}C resonant nuclear reaction has been used to investigate the role of hydrogen as a contributing factor in the formation of stress-induced voids in very large scale integrated circuit metallizations. Hydrogen profiles were measured from a series of layered structures consisting of aluminum-copper alloy metallizations deposited on borophosphosilicate glass and capped with a variety of commercial passivation materials in order to examine differences in the concentrations and depth distributions of hydrogen within the layered structures.