Publications Details
STM measurements of the interaction of vacancies and steps during low-energy-ion bombardment of Si(001)
We create mobile surface vacancies on vicinal Si(001) by bombarding the surface with 300 eV Xe ions at a substrate temperature of 465{degrees}C. The vacancies preferentially annihilate at the rough steps retracting them with respect to their smooth neighbors. This process leads to a bimodal terrace width distribution. The retraction of the rough steps due to the vacancy annihilation is in competition with the healing process by which the surface tries to maintain its equilibrium configuration of equally spaced steps. As the two competing processes balance, the surface reaches steady state and subsequent removal of surface atoms is manifest as simple step flow.