Publications Details
Spatially-Resolved Ion Trajectory Measurements During Cl(2) Reactive Ion Beam Etching and Ar Ion Beam Etching
Vawter, G.A.; Woodworth, Joseph R.; Zubrzycki, Walter J.
The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl2, Ar and O2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers.