Publications Details
Si Atomic Layer Epitaxy based on Si[sub 2]H[sub 6] and remote He plasma bombardment
We have demonstrated removal of H from a H-passivated Si(100) surface by low energy ([approximately]50 eV) He ion bombardment. The extent of the removal of H from the surface can be controlled by varying the duration of He bombardment and plasma parameters. This, in turn, means that the growth rate by this method can also be controlled. Si[sub 2]H[sub 6] was shown to adsorb in a self-limiting manner on the Si(100) surface.