Publications Details

Selective suppression of photochemical etching: Raman spectroscopy for pre-etch process selection

Ashby, C.I.H.; Myers, D.R.

Carrier-driven photochemical reactions require direct participation of free carriers for the chemical reaction to proceed. Therefore, they can be selectively suppressed by increasing the carrier recombination rate through creation of defects using ion implantation. The residual defect concentration following ion implantation should correlate with etching suppression. Changes in the Raman LO-phonon lineshape correlate well with the degree of etching suppression and predict etching behavior better than defect concentrations calculated with the Monte Carlo code, TRIM. Raman spectroscopy may be a useful pre-etch diagnostic to predict the degree of etching suppression resulting from a given implantation treatment. 11 refs.