Publications Details
Revised nomenclature for defects at or near the Si/SiO{sub 2} interface
A revised nomenclature for defects in MOS devices is described which clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. ``Oxide traps`` are simply defects in the SiO{sub 2} layer, and ``interface traps`` are defects at the Si/SiO{sub 2} interface; nothing is presumed about how either communicates with the underlying Si. ``Fixed states`` are defined electrically as trap levels that do not communicate with the Si on the time scale, but ``switching states`` can exchange charge with the Si. Fixed states presumably are oxide traps, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e. ``border traps.`` Thus the term ``traps`` is reserved for defect location, and the term ``states`` for electrical response. This defect picture is used to provide new insight into the response of MOS capacitors with 45-nm radiation-hardened oxides to electrical stress and annealing; capacitance-voltage and thermally-stimulated-current measurements are used. 2 figs, 14 refs. (DLC)