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Radiation hardening of a high voltage IC technology (BCDMOS)

Desko Jr., J.C.; Darwish, M.N.; Dolly, M.C.; Goodwin, C.A.; Dawes Jr., W.R.; Titus, J.L.

A program was undertaken to radiation harden AT&T's existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology. © 1990 IEEE