Publications Details
Power semiconductor devices for space nuclear power systems
Silicon power diodes, transistors, thyristors and other devices can be damaged by elevated temperatures, temperature cycling, and radiation. In this paper we discuss the vulnerability of devices that integrate bipolar and MOSFET (metal-oxide-semiconductor-field-effect transistor) devices onto a single chip. Such devices offer the advantages of good current carrying capability that is characteristic of bipolar structures and high impedance control nodes that are characteristic of MOSFET devices. Devices located near a space-based fission power source will be subjected to high temperatures, temperature cycling, naturally occurring radiation, radiation from the reactor; and these devices may be subjected to radiation from or caused by weapons used to attack the power source. Damaging radiation includes electrons and protons trapped in naturally occurring radiation belts, electrons pumped into these belts as a result of nuclear explosions, cosmic rays, neutrons from the reactor, and high energy photons (gamma rays and x-rays). 3 refs., 2 figs.