Publications Details
Optimization of an electron cyclotron resonance plasma etch process for n{sup +} polysilicon: HBr process chemistry
Designed experiments were employed to characterize a process for etching phosphorus doped polycrystalline silicon with HBr in a close-coupled ECR plasma reactor configured for 200 mm wafers. A fractional factorial screening experiment was employed to determine the principal input factors and the main etch effects. Linear models of the process responses indicate RF power, O{sub 2} flow rate, and the position of the resonance zone (with respect to the wafer) as the three strongest factors influencing process performance. Response surfaces generated using data from a follow-on response surface methodology (RSM) experiment predicted an optimum operating region characterized by relatively low RF power, a small O{sub 2} flow, and a resonance zone position close to the wafer. The optimized process demonstrated a polysilicon etch rate of 270 nm/min, an etch rate non-uniformity of 2.2% (1s), an etch selectivity to oxide greater than 100:1, and anisotropic profiles. Particle test results for the optimized process indicated that careful selection of the O{sub 2} fraction is required to avoid polymer deposition and particle formation.