Publications Details
Observation of metal-oxide-semiconductor transistor operation using scanning capacitance microscopy
We report scanning capacitance microscopy (SCM) images of a working p-channel metal-oxide-semiconductor field-effect transistor (P-MOSFET) during device operation. Independent bias voltages were applied to the source/gate/drain/well regions of the MOSFET during SCM imaging, and the effect of these voltages on the SCM images is discussed. © 1999 American Institute of Physics.