Publications Details
New insights into radiation-induced oxide-trap charge through thermally-stimulated-current (TSC) measurement and analysis
In this summary, we re-evaluate estimates of trapped-hole energies inferred from TSC measurements and transistor annealing studies. Improved estimates of the trapped-hole ``attempt-to-escape`` frequency ({upsilon}{sub A}) and a quantitative treatment of (Schottky) electric-field induced barrier lowering strongly suggest that previous estimates of trapped-hole energies in TSC and transistor annealing studies are too low. Moreover, we show that TSC measurements can be modeled analytically from first principles, and the resulting model can accurately predict TSC measurements under arbitrary heating conditions. Finally, we evaluate the dependence of electron trapping in irradiated SiO{sub 2} on dose and on electric field during irradiation. 30 refs.