Publications Details
Mechanisms of selectivity loss during tungsten CVD (chemical vapor deposition)
The tungsten subfluoride mechanism as well as other proposed mechanisms of selectivity loss are reviewed. To further demonstrate the viability of the tungsten subfluoride mechanism, we have extended the measurement of the tungsten subfluoride production rate down to 450{degree}C. We also report results from some preliminary experiments designed to identify the selectivity loss mechanism when elemental silicon is available for reaction. Comments regarding the origins of the insulator effect and selectivity loss for silane reduction are offered. 23 refs., 2 figs.