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Low threshold current implanted-planar buried-heterostructure graded-index separate confinement heterostructure laser in GaAs/AlGaAs

Vawter, G.A.; Myers, D.R.; Brennan, T.M.; Hammons, B.E.

We report dramatic improvements to the implanted-planar buried-heterostructure graded-index separate confinement heterostructure (IPBH-GRINSCH) laser in (AlGa)As/GaAs which produces low threshold current, continuous-wave operation. Our process features significantly reduced fabrication complexity of high quality, index-guided laser diodes compared to regrowth techniques and, in contrast to diffusion-induced disordering, allows creation of self-aligned, buried, blocking junctions by ion implantation. The improved single-stripe IPBH-GRINSCH lasers exhibit 39 mA threshold current, cw operation.