Publications Details

Interfacial arsenic from wet oxidation of Al{sub x}Ga{sub 1-X}As/GaAs: Its effects on electronic properties and new approaches to MIS device fabrication

Ashby, C.I.H.; Sullivan, J.P.; Newcomer, P.P.

Three important oxidation regimes have been identified in the temporal evolution of the wet thermal oxidation of Al{sub x}Ga{sub 1-x}As (1 {ge} x {ge} 0.90) on GaAs: (1) oxidation of Al and Ga in the Al{sub x}Ga{sub 1-x}As alloy to form an amorphous oxide layer, (2) oxidative formation and elimination of elemental As (both crystalline and amorphous) and of amorphous As{sub 2}O{sub 3}, and (3) crystallization of the oxide film. Residual As can result in up to a 100-fold increase in leakage current and a 30% increase in the dielectric constant and produce strong Fermi-level pinning and high leakage currents at the oxidized Al{sub x}Ga{sub 1-x}As/GaAs interface. The presence of thermodynamically-favored interfacial As may impose a fundamental limitation on the application of AlGaAs wet oxidation for achieving MIS devices in the GaAs material system.