Publications Details

Interaction of deuterium with internal surfaces in silicon

Myers, S.M.; Follstaedt, D.M.; Stein, H.J.; Wampler, W.R.

The strength of deuterium bonding to the walls of closed cavities within Si was determined in ion-beam experiments. These studies circumvented an inherent indeterminacy in the analysis of external-surface desorption and thereby allowed the Si-H surface bond energy to be quantified for the first time. The bond energy is 2.5 {plus minus} 0.2 eV for submonolayer coverages. 14 refs., 3 figs.