Publications Details
III-Sb (001) growth surfaces: Structure and island nucleation
The authors have determined the reconstructions present on AlSb and GaSb(001) under conditions typical for device growth by molecular beam epitaxy. Within the range of Sb flux and temperature where the diffraction pattern is nominally (1 x 3), three distinct (4 x 3) reconstructions actually occur. The three structures are different than those previously proposed for these growth conditions, with two incorporating mixed III-V dimers on the surface. The presence of these hetero-dimers in the top Sb layer leads to an island nucleation and growth mechanism fundamentally different than for other III-V systems.