Publications Details
Hydrogen diffusion and chemistry during the annealing-induced generation of mobile protons in the oxide layer of Si/SiO{sub 2}/Si capacitors
In a number of recent studies the generation of mobile protons in the buried oxide of SOI materials and in thermal oxide buried underneath a poly-Si layer has been discussed. The protons are found to be stable and can be easily rearranged by applying an electric field. The details of the hydrogen reactions leading to the generation of the mobile H{sup +} are still under investigation. In a recent work a dynamic equilibrium model was presented. The forward reaction dominates above {approximately} 500 C and the resulting H{sup +} is mobile and entrapped inside the SiO{sub 2}. The electron is donated to the Si. The H{sup 0} is likely to be formed through H{sub 2} + K {Leftrightarrow} HK + H{sup 0}, where K is a cracking site. In the same work it was shown that the reactive hydrogen species enter the oxide from the device edges. Hence, the amount of the reactive species reaching the oxide by diffusion through the Si overlayer is negligible. These results seem to contradict earlier studies where it is shown that hydrogen can easily diffuse through the top Si layer under the given experimental conditions. The authors present here new details on hydrogen diffusion and chemistry during the protonation anneal that may offer an explanation for the hydrogen diffusion paradox. The new findings suggest that reactions at the ambient/SiO{sub 2} interface play a key role.