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Hole and electron trapping in irradiated MOS devices

Fleetwood, D.M.

Short communication.

Additional Metadata

SAND Number

SAND1991-1953C

Date Published

January 1, 1991

Research Partner

Sandia National Laboratories, New Mexico

Links

OSTI

Subjects

Engineering

Materials Science

Keywords

Mos transistors

Physical radiation effects

Holes

Interfaces

Silicon

Silicon oxides

Thermoelectricity

Trapping

Chalcogenides

Electricity

Elements

Oxides

Oxygen compounds

Radiation effects

Semiconductor devices

Semimetals

Silicon compounds

Transistors

426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

360605 - Materials- Radiation Effects