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High Speed Traveling Wave Electrooptic Intensity Modulator with a Doped PIN Semiconductor Junction

Vawter, G.A.; Hietala, V.M.; Wendt, J.R.; Fuchs, B.A.; Hafich, M.; Housel, M.; Armendariz, M.; Sullivan, C.T.

A high-electrooptic-efficiency Mach-Zehnder intensity modulator is demonstrated with a bandwidth exceeding 40 GHZ. The 1 mm-long modulator has a switching voltage comparable to undoped semiconductor designs of much greater length.