Publications Details
High Speed Traveling Wave Electrooptic Intensity Modulator with a Doped PIN Semiconductor Junction
Vawter, G.A.; Hietala, V.M.; Wendt, J.R.; Fuchs, B.A.; Hafich, M.; Housel, M.; Armendariz, M.; Sullivan, C.T.
A high-electrooptic-efficiency Mach-Zehnder intensity modulator is demonstrated with a bandwidth exceeding 40 GHZ. The 1 mm-long modulator has a switching voltage comparable to undoped semiconductor designs of much greater length.