Publications Details
GaN metal oxide semiconductor field effect transistors
A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga2O3(Gd2O3) as the gate dielectric. The MOS gate reverse breakdown voltage was >35 V which was significantly improved from 17 V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at Vds = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, fT, and maximum frequency of oscillation, fmax of 3.1 and 10.3 GHz, respectively, were measured at Vds = 25 V and Vgs = -20 V.