Publications Details
Fundamental Science of Doping and Defects in Ga2O3 for Next Generation Power Semiconductors
Ihlefeld, Jon I.; Paisley, Elizabeth A.; Laros, James H.; Armstrong, Andrew A.
The aim and scope of this project was the development of a capability to prepare high-quality, epitaxial beta gallium oxide films by oxide reactive molecular-beam epitaxy. The purpose was to demonstrate that beta gallium oxide could be grown by such a method using Sandia’s existing oxide molecular-beam epitaxy instrument. The key activity in this project was the installation of a gallium oxide capability on the Sandia instrument. This required the acquisition of several custom items for the instrument, including: a gallium effusion cell, appropriate cell power supplies and temperature controllers, a shutter to block beam flux, installation of an existing ozone generator with a directed gas nozzle and controlled leak valve, and re-routing the chilled water system to accommodate the cell. In addition, beta gallium oxide single crystals were acquired and their surfaces characterized by reflection high energy electron diffraction.