Publications Details

Formation and stability of As-H bonds in H-implanted GaAs

Stein, H.J.

The chemical bonding and isochronal annealing of H implanted into GaAs at 80 K has been investigated by infrared absorption measurements. Based upon the frequency shift when deuterium is substituted for H, and an equivalent band formation in InAs, assignment of a new band at 2029 cm{sup {minus}1} is made to As-H centers. Bonding of H at interstitial As of and As-vacancy pair which anneals between 150 and 250K is suggested as the structure for the defect. A previously-reported absorption band at 1834 cm{sup {minus}1} assigned to Ga-H centers in H-implanted GaAS increase in intensity when H is released from As-H centers. 15 refs., 5 figs.