Publications Details

Flux Flow Microelectronics

Martens, J.S.; Hietala, V.M.; Plut, T.A.; Ginley, D.S.; Vawter, G.A.; Tigges, C.P.; Siegal, M.P.; Phillips, J.M.; Hou, S.Y.

Flux-flow based devices such as the superconducting flux flow transistor and magnetically controlled long junctions have been made from thin films of TICaBaCuO and YBaCuO. The devices are based on the magnetic control of flux flow in their respective structures: a long junction or an array of weak links. The equivalent circuits of the two devices are similar: a low impedance input control line, an output impedance of 3-20 Q and an active current-controlled element. The long junctions have tended to be slower, have lower gain and be somewhat less noisy than their counterparts. The performance of circuits such as narrowband and distributed amplifiers (SO GHz bandwidths, noise figures < 3 dB), phase shifters (continuous with < 2 dB loss 4-40 GHz), logic gates (2-3 ps gate delays) and memories made using these devices will be compared and analyzed. © 1993 IEEE