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Field dependence of interface trap buildup in Si-gate MOS devices

Schwank, James R.

Radiation-induced interface traps in Si-gate MOS devices follow an E{sup {minus}1/2} electric field dependence for E {ge} +0.13 MV/cm when electron-hole recombination effects are included. A hybrid model involving hole trapping and hydrogen transport is suggested. 20 refs., 4 figs.