Publications Details

Exciton kinetics in poly(di-n-hexylsilane)

Kepler, R.G.

We have previously shown that charge carriers are generated by exciton-exciton annihilation in solid films of poly(di-n-hexylsilane). Using this phenomenon we show that the exciton-exciton annihilation rate constant γ at ambient temperature is not a function of the photon energy used to create the excitons even at energies well out into the long wavelength tail of the exciton absorption band. We also show that the excitons remain highly mobile throughout their 600 ps lifetime and that they diffuse distance comparable to the crystallite size in the film. The value of γ obtained in these studies is in excellent agreement with that obtained previously in fluorescence intensity studies. © 1993.