Publications Details

Etching effects in ion implanted SiO{sub 2}

Battaglin, G.; Boscolo-Boscoletto, A.; Caccavale, F.; De Marchi, G.; Mazzoldi, P.; Arnold, G.W.

Chemical and physical transformations involved in ion implantation processes in glasses determine changes in mechanical. and tribological properties, in network dilatation, in induced optical absorption and luminescence and in the composition and chemical behavior as a function of different experimental conditions (ion, energy, dose, target temperature). Variations of chemical etch rate in HF are related to radiation damages and formation of compounds. A systematic study of the etch rate changes in silica due to Ar, N, Si plus N implants has been performed. Structure modifications at depths greater than the corresponding implanted ion ranges are evidenced for nuclear deposited energy greater than 10{sup 22} keV cm{sup {minus}3}. Formation of silicon oxynitrides reduces the etch rate values.