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Enhanced high temperature power controller

Henfling, Joseph A.; Atcitty, Stanley

This paper describes an implementation strategy used to develop a high temperature power controller. The system is based on using high-temperature (HT) silicon-on-insulator (SOI) technology with silicon carbide (SiC) based integrated circuits (ICs) to create an efficient, high-temperature power controller. Two drives were tested with this system, one using normally off JFET switching and the other using MOSFET switching. Normally OFF JFETs made from SiC were used to drive the output loads. Such circuit designs will improve the efficiency of future smart grid power controllers.