Publications Details
Energy distribution of trapped holes in irradiated SiO sub 2
There is a discrepancy between literature estimates of trapped-hole energies in irradiated SiO{sub 2} obtained via thermal and optical methods (0.6-1.4 eV and 3 eV, respectively). A method has been developed for obtaining an improved estimate of the energy distribution of trapped holes in irradiated SiO{sub 2}, which brings thermal and optical estimates into much closer agreement. Experimental and theoretical TSC (thermally stimulated current) spectra are shown for a soft MOS capacitor with a 350-nm oxide cycled through 4 irradiations (10 keV x rays) and TSC measurements. Four trap-energy distributions were also independently derived from TSC at different ramp rates for a 45-nm radiation-hardened oxide. The trap distributions inferred from TSC for the 45-nm hard oxide agree with each other and with that inferred for the soft 350-nm oxide. 2 figs, 8 refs. (DLC)