Publications Details
Electronic properties of Si-doped n-doping-intrinsic-p-doping-intrinsic (nipi) structures in GaAs
The electronic properties of heavily and orderly Si-doped nipi structures in GaAs are studied theoretically using the ab-initio self-consistent pseudopotential method within the local density approximation. Two nipi configurations are considered. Besides investigating the nature of the impurity-related band edge states, the xy-planar-averaged local ionic and self-consistent potentials are also analyzed. The screening effect of the host crystal on the doping induced potential is found to be small. The effects of the doping induced electric field and the strain due to dopings are also examined. 13 refs., 9 figs., 2 tabs.