Publications Details

Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO₂ Interface Defects

Moxim, Stephen J.; Lenahan, Patrick M.; Sharov, Fedor V.; Haase, Gad S.; Hughart, David R.

It is widely accepted that the breakdown of Si0₂ gate dielectrics is caused by the buildup of stress-induced defects over time. Although several physical mechanisms have been proposed for the generation of these defects, very little direct experimental evidence as to the chemical and physical identity of these defects has been generated in the literature thus far. Here, we present electrically detected magnetic resonance (EDMR) measurements obtained via spin-dependent recombination currents at the interface of high-field stressed Si/Si0₂ metal-oxide-semiconductor field effect transistors (MOSFETs).