Publications Details

Publications / Conference

Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

Fleetwood, D.M.

Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed.