Publications Details
Effect of oxide thickness on interface-trap buildup rates
The time dependence of radiation-induced interface-trap charge buildup for MOS transistors of varying gate-oxide thickness was investigated in order to clarify how the location of hydrogen in the SiO{sub 2} contributes to N{sub it} buildup. Radiation-induced interface-trap buildup in wet and dry gate oxides is compared for irradiations and anneals at constant positive bias and for negative-bias irradiations followed by positive-bias anneals. Implications of these results for different models of interface-trap buildup are discussed. 2 figs, 9 refs. (DLC)