Publications Details
Dual-transistor method to determine. delta. V/sub ot/ and. delta. V/sub it/ for MOS devices
It is shown how standard ..delta..Vth and mobility measurements made on otherwise identical n- and p-channel transistors can be combined to accurately estimate radiation-induced ..delta..V/sub ot/ and ..delta..V/sub it/. Applications of the method are described. 12 refs., 2 figs.