Publications Details

Donor Formation Under Hydrogen Plasma Exposure and Ion Implantation

Stein, Herman J.

Results have been obtained on hydrogen dose, dose rate and substrate temperature dependence for hydrogen-assisted thermal donor formation in Czochralski Si. The study combined ion implantation and hydrogen plasma exposure to inject hydrogen, and infrared absorption and spreading resistance probe measurements to detect the donors. Near surface donor concentrations increase with dose and temperature between 350 and 400°C. The penetration depth for thermal donor formation exhibits a $\sqrt{t}$ dependence, and a thermal activation energy of 1.5 ± 0.2 eV.