Publications Details

Development of Metal Boride/Carbide Precursors for MOCVD Applications

Root, Harrison D.; Boissiere, Jacob D.; Christian, Matthew S.

This report describes the proposed efforts for a three-year (CY23-25) program to develop refractory metal boride/carbide precursors for metal-organic chemical vapor deposition (MOCVD) applications. Reported are the CY24 results on the thermal processing of bis-cyclopentadienyl dialkyl and tetra-alkyl precursors to obtain metal carbide products. Precursors evaluated are commercially available. Materials were processed within in a custom-built MOCVD system at 1000 ⁰C, as well as in a hot isostatic press (HIP) at temperatures of 1000 ⁰C or 1650 ⁰C at pressures of 5000 psi. The products were identified as metal carbide, metal oxide, or a mixture of carbide and oxide phases depending on the starting material and process used. Density functional theory calculations were performed to determine the decomposition mechanism and to inform how ligand choice led to the products.