Publications Details
Current status of InAsSb strained-layer superlattice infrared detectors: Demonstration of a high detectivity, 10. mu. m photodiode
A high detectivity infrared photodiode was constructed using an InAs{sub 0.15}Sb{sub 0.85}/InSb strained-layer superlattice (SLS). The surface passivated device exhibited detectivities {ge} 1 {times} 10{sup 10} cm{radical}Hz/W at wavelengths {le} 10 {mu}m. This device demonstrates the feasibility of a long wavelength, photovoltaic infrared detector technology based on InAsSb SLSs. 8 refs., 4 figs.