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Coulomb Driven New Bound States at the Integer Quantum Hall States in GaAs/Al(0.3)Ga(0.7)As Single Heterojunctions

Simmons, J.A.

Coulomb driven, magneto-optically induced electron and hole bound states from a series of heavily doped GaAs/Al0.3Ga0.7As single heterojunctions (SHJ) are revealed in high magnetic fields. At low magnetic fields ({nu} >2), the photohuninescence spectra display Shubnikov de-Haas type oscillations associated with the empty second subband transition. In the regime of the Landau filling factor {nu} <1 and 1< {nu} <2, we found strong bound states due to Mott type Vocalizations. Since a SHJ has an open valence band structure, these bound states area unique property of the dynamic movement of the valence holes in strong magnetic fields.