Publications Details
Composition analysis of ECR-grown SiO2 and SiOxFy films
Low dielectric constant insulating films, such as SiO2 and fluorine doped SiOx, are an important class of materials in semiconductor manufacturing. Evaluation of a new process to grow low temperature SiOxFy films using an electron cyclotron resonance plasma (ECR) was done. Ion beam analysis techniques were used to characterize the compositions of the insulating films and correlate this with their physical and electrical properties. Since Si, O, F and H are of primary interest in these films, three different techniques were utilized in order to get a more thorough analysis. 2.8 MeV He Rutherford Backscattering Spectrometery (RBS) revealed the Si and O content, but because of the low fluorine concentrations (2-10 at.%) RBS proved difficult for analysis of the F content. Instead, Nuclear Reaction Analysis (NRA), which used 872 keV protons in the 19F(p, αγ)16O reaction, was employed. Finally, 30 MeV Si Elastic Recoil Detection (ERD) was used to obtain the H concentration and supplement the O analysis. The dielectric constant decreased from ε = 4 to ε = 3.55 as the F concentration increased from 0 to 10%.