Publications Details

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Ryder, Kaitlyn L.; Ryder, Landen D.; Sternberg, Andrew L.; Kozub, John A.; Zhang, En X.; Lalumondiere, Stephen D.; Khachatrian, Ani; Buchner, Steven P.; Mcmorrow, Dale P.; Hales, Joel M.; Zhao, Yuanfu; Wang, Liang; Wang, Chuanmin; Weller, Robert A.; Schrimpf, Ronald D.; Weiss, Sharon M.; Reed, Robert A.

Heavy ion, focused x-ray, and pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. It is observed that these transient shape characteristics depend on the source (ion, x-ray, or laser), even when similar amounts of charge are generated. Finally, the observed differences are examined and explained in terms of basic charge collection mechanisms.