Publications Details

Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP Applications

Chang, P.C.

The increased demand for portable electronics has lead to the need for higher performance and efficiency. Devices operating at less than 50 {micro}W of power are defined as ultra-low-power (ULP) devices. New progress has been achieved on InP/InGaAs HBT and InAIAs/InGaAs HBT optimized for ULP applications. f{sub T} values of 2.2 GHz, and f{sub MAX} values of 20 GHz have been obtained for HBTs operating at less than 40 {micro}W. Current gain is greater than 45 with the device operating at less than 20 {micro}A on a 2.5 x 5 {micro}m{sup 2} device. These devices have been significantly improved over the previously reported MOCVD grown InP/InGaAs ULP HBT which has f{sub MAX} of 10 GHz operating in the ultra-low-power level. The improvements have been attributed to the reduction of base dopant diffusion associated with Zn doping.