Publications Details

Cl{sub 2}+Ar reactive-ion-beam etching of InGaAlAs for smooth, low- damage definition of asymmetric Fabry-Perot optical transmission modulators

Vawter, G.A.; Fritz, I.J.; Drummond, T.J.; Lee, S.R.; Hafich, M.J.; Armendariz, M.G.; Briggs, R.D.; Casalnuovo, S.A.; Griego, L.

Cl{sub 2}+Ar Reactive-Ion-Beam Etching is demonstrated for anisotropic, low-damage etching of InAlGaAs semiconductor alloys for use as optical transmission modulators at 1.32 {mu}m wavelength.