Publications Details

Chlorine reactive-ion-beam etching of InSb and InAs sub 0. 15 Sb sub 0. 85 /InSb strained-layer-superlattices

Vawter, G.A.; Wendt, J.R.

We have demonstrated that CI{sub 2} RIBE is a useful dry-etch technology for InSb and InAsSb/InSb Strained-Layer Superlattices (SLSs) in spite of the low vapor pressure of the In chlorides. Etching of these materials using both Cl{sub 2} Reactive-Ion-Beam Etching (RIBE) and Ar IBE resulted in extremely smooth surfaces and well controlled etch rates with CI{sub 2} RIBE accelerating the etch rate by approximately a factor of two compared to Ar IBE over the range of beam energies studied. Sloped sidewalls resulted at all tested Cl{sub 2} RIBE energies and are probably caused by sidewall passivation with In chlorides. The anisotropy and reduced etch-induced damage of Cl{sub 2} RIBE is expected to become of critical importance in the fabrication of dense arrays of long-wavelength photodetectors. 2 figs.