Publications Details
Characterization of chemically prepared PZT thin films
We have systematically varied processing parameters to fabricate PZT 53/47 thin films. Polycrystalline PZT thin films were fabricated by spin depositing Pt coated SiO{sub 2}/Si substrates with alkoxide solutions. Our study focused on two process parameters: (1) heating rate and (2) excess Pb additions. We used rapid thermal processing techniques to vary heating rates from 3{degree}C/min to 8400{degree}C/min. Films were characterized with the following excess Pb additions: 0, 3, 5, and 10 mol %. For all process variations, films with greater perovskite content had better ferroelectric properties. Our best films were fabricated using the following process parameters: an excess Pb addition of 5 mol %, a heating rate of 8400{degree}C/min and annealing conditions of 700{degree}C for 1 min. Films fabricated using these process conditions had a remanent polarization of 0.27 C/m{sup 2} and a coercive field of 3.4 MV/m. 12 refs., 4 figs.