Publications Details
Characteristics of oxynitrides grown in N{sub 2}O
MOS oxides have been fabricated by oxidation of silicon in N{sub 2}O. Processes studied include oxidation in N{sub 2}O alone, and two-step oxidation in O{sub 2} followed by N{sub 2}O. For both oxides, a nitrogen-rich layer with a peak N concentration of {approximately} 0.5 at. % is observed at the Si-SiO{sub 2} interface with SIMS. Electrical characteristics of N{sub 2}O oxides, such as breakdown and defect generation, are generally improved, especially for the two-step process. Drawbacks typically associated with NH{sub 3}-nitrided oxides such as high fixed oxide charge and enhanced electron trapping, are not observed in N{sub 2}O oxides, which is probably due to their smaller nitrogen content.