Publications Details
Analysis of parametric drift of a MESFET-based GaAs MMIC due to 125{degrees}C storage
Microwave parameters drifted significantly for two out of twenty- nine GaAs MESFET-based MMICs during ten weeks of storage at 125{degrees}C and 150{degrees}C. Analysis using measured, post- storage, FET characteristics and the microwave behavior indicates that all of the FETs in the MMICs drifted, most likely due to contamination.