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An examination of the 1-MeV equivalent silicon damage methodology

Griffin, P.J.; Kelly, J.G.; Luera, T.F.; Lazo, M.S.

The assumptions, approximations, and uncertainty in the 1-MeV equivalent silicon damage methodology are reviewed. A new silicon displacement kerma function, based on ENDF/B-VI cross sections, is presented and its shape is experimentally confirmed. The issue of an associated 1-MeV equivalent reference kerma value is discussed. 19 refs., 4 figs.