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An application of selective electrochemical wafer thinning for silicon characterization

Medernach, J.W.

A new technique is reported for the rapid determination of interstitial oxygen (O{sub i}) in heavily doped n{sup +} and p{sup +} silicon. This technique includes application of a selective electrochemical thinning (SET) process and FTIR transmittance measurement on a limited area of a silicon wafer. The O{sub i} is calculated using ASTM F1188--88 with the IOC 88 calibration factor. An advantage of SET over mechanical thinning is that the original wafer thickness and diameter are maintained for additional processing. 1 tab.