Publications Details
Aminodisilanes as silylating agents for dry-developed positive-tone resists for extreme ultraviolet (13.5) microlithography
We recently described a near-surface imaging scheme that employs disilanes and a bilayer resist scheme which together dramatically improve silicon contrast. A relatively thin 0.25 to 0.1 {mu}m imaging layer of a chemically amplified photo-crosslinking resist (Shipley XP-8844 or XP-9472) is spin coated on top of a thicker (0.25-0.5 {mu}m) layer of hard-baked resist (such as Shipley MP-1807). This bilayer scheme improves silicon contrast and provides additional advantages such as providing a planarizing layer and a processing layer.