Publications Details

A temperature dependent SPICE macro-model for power MOSFETs

Pierce, D.G.

A power MOSFET macro-model for use with the circuit simulator SPICE has been developed suitable for use over the temperature range of {minus}55 to 125{degrees}C. The model is comprised of a single parameter set with the temperature dependence accessed through the SPICE TEMP card. This report describes in detail the development of the model and the extraction algorithms used to obtain model parameters. The extraction algorithms are described in sufficient detail to allow for automated measurements which in turn allows for rapid and cost effective development of an accurate SPICE model for any power MOSFET. 22 refs.